Reliable Non-Volatile Resistive Memory IP
It delivers non‑volatile performance to retain data upon power loss. Direct programming without pre‑erase enables faster write speed than Flash. With excellent power efficiency, it helps optimize SRAM capacity planning.
Implemented in BEOL with 2 masks, it is compatible with HV and BCD processes. The device can be scaled down below 10nm.
It achieves outstanding endurance and data retention performance. Arrays of different capacities feature corresponding cycle lifetimes and guarantee reliable data preservation under high‑temperature conditions.
Compatible with advanced FinFET and FD‑SOI processes, it applies to various chip designs, covering low‑power, power‑management and other relevant chip scenarios.
Data is retained
when power is off
Device size can be
scaled down to
below 10nm
Extremely low operating voltage
and programming current,
suitable for low-power applications
Programming speed is
significantly better than
that of Flash devices
BEOL, compatible with
special processes such as
HV and BCD
Superior endurance with
stable cycle life and reliable
high‑temperature data retention
OLED De-MURA
ePaper
MCU
Storage Controller
CIM
