Full-Process-Node One-Time Programmable Memory IP
High reliability: Sufficient read current margin; memory cell unchanged after 72-hour 250-degree-C baking, suitable for harsh environments such as automotive electronics and industrial control
High speed: Fast read speed; programmable time configurable from 20us to 100us; single-supply programming without additional boost module
Cost-effective: Fully process compatible with no additional mask required, directly reducing tape-out cost and cycle
SuperMTP® automotive upgrade: Passed AEC-Q100 Grade 0 certification, features redundant design, and meets ISO 26262 standards
Full process coverage: Floating Gate OTP for 90nm and above platforms; Anti-fuse OTP for 90nm and below (including 22nm ULL and FinFET advanced nodes), with patents granted in the world wide
Suitable for chip ID identification, defect repair, configuration data/program code/key/calibration parameter storage in consumer electronics, automotive electronics, industrial control, etc.
Fully process compatible, no additional mask even for 22nm FinFET and below
Memory cell unchanged after 72-hour 250-degree-C baking
Read current far exceeds threshold with sufficient margin
Floating Gate and Anti-fuse routes covering all process nodes
Single-supply, no additional boost module required
Suitable for battery-powered IoT and wearable products
Consumer Electronics
(chip ID, configuration data/key storage)
Automotive Electronics
(ECU firmware and critical configuration storage)
Industrial Control
(high-temperature harsh environments)
PMIC
(analog trimming)
MCU
(program code storage)
Motor Driver / Quick Charge
(configuration and calibration parameter storage)
